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SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator
Pérez-Tomás,
Amador.
Microelectronic Engineering.
v.
Volume 85.
no.
Number 4.
2008-04.
p.
704 -
709...
issn:
0167-9317
.
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