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Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction
Benediktovitch,
Andrei.
Journal of applied crystallography.
v.
Volume 48.
no.
Number 3.
2015-06-01.
p.
655 -
665...
issn:
0021-8898
.
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