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Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction
Benediktovitch, Andrei.  Journal of applied crystallography.  v. Volume 48. no. Number 3.   2015-06-01. p. 655 - 665... issn: 0021-8898 .   

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