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Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC
Pérez-Tomás,
Amador.
Materials Science in Semiconductor Processing.
v.
Volume 16.
no.
Number 5.
2013.
p.
1336 -
1345...
issn:
1369-8001
.
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