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New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology
Mironov,
O. A..
Physica Status Solidi (c).
v.
Volume 11.
no.
Number 1.
2014-01-21.
p.
61 -
64...
issn:
18626351
.
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