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New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology
Mironov, O. A..  Physica Status Solidi (c).  v. Volume 11. no. Number 1.   2014-01-21. p. 61 - 64... issn: 18626351 .   

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