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High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual
Myronov,
Maksym.
Applied Physics Letters.
v.
Vol.94.
no.
No.9.
2009-03-04.
p.
44 -
issn:
0003-6951
.
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