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Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures
Myranov,
Maksym.
Applied Physics Letters.
v.
Vol.80.
no.
No.19.
2002-05-13.
p.
3557 -
3559...
issn:
0003-6951
.
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