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Improved analog performance in strained-Si MOSFETs using the thickness of the silicon-germanium strain-relaxed buffer as a design parameter
Alatise,
Olayiwola M..
IEEE Transactions on Electron Devices.
v.
Vol.56.
no.
No.12.
2009.
p.
3041 -
3048...
issn:
0018-9383
.
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