The University of Warwick Library - WebBridge

Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature
Dobbie, A. (Andrew).  Semiconductor Science and Technology.  v. Vol.25. no. No. 8.   2010-08-02. p. 89 - issn: 0268-1242 .   

Online access not found

Sorry - based on the information provided, WebBridge cannot offer appropriate links.