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Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3thin films grown on Y-stabilised ZrO2(111)
Zhang,
K. H. L..
Journal of Physics: Condensed Matter.
v.
Vol.23.
no.
No.33.
2011-08.
p.
91 -
issn:
0953-8984
.
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