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A defects-based model on the barrier height behavior in 3C-SiC-on-Si Schottky barrier diodes
Arvanitopoulos,
Anastasios E..
IEEE Journal of Emerging and Selected Topics in Power Electronics.
v.
8.
no.
1.
2020.
p.
54 -
65...
issn:
2168-6777
.
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