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Low-frequency noise suppression and dc characteristics enhancement in sub-mu m metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE
1st International SiGe Technology and Device Meeting (ISTDM).
v.
224.
no.
1-4.
2004-03-15.
p.
265 -
269...
issn:
0169-4332
.
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