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SECONDARY-ION MASS-SPECTROMETRY ANALYSIS OF ULTRATHIN IMPURITY LAYERS IN SEMICONDUCTORS AND THEIR USE IN QUANTIFICATION, INSTRUMENTAL ASSESSMENT, AND FUNDAMENTAL MEASUREMENTS
2nd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors.
v.
12.
no.
1.
1994-01.
p.
186 -
198...
issn:
1071-1023
.
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